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Molybdenum discs are widely used as contact materials in silicon controlled rectifiers diodes, transistors and thyristors (GTO’S). Other than in specialist applications, molybdenum is now accepted as the first choice mounting material for power semiconductor devices due to its significantly lower cost and weight.The fact that both materials have a similar coefficient of expansion to silicon combined with high thermal conductivity makes them an ideal choice, especially in large area power devices where considerable heat is generated. Further applications include the use of molybdenum as heat sink bases in IC’S, LSI’S and hybrid circuits. Reference Standards
GB/T3876-83, GB/T14592-93, QJ/BHZ02.68-89
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Fe |
Ni |
Al |
Si |
Ca |
Mg |
P |
C |
O |
N |
0.006 |
0.003 |
0.002 |
0.003 |
0.002 |
0.002 |
0.001 |
0.010 |
0.006 |
0.003 |
PRODUCTION METHOD |
THICKNESS |
DIAMETER |
|
mm |
inch |
mm |
inch |
PUNCH |
0.1 - 0.3 |
0.004 - 0.012 |
1.0 - 50.0 |
0.040 - 2.0 |
|
0.31 - 0.5 |
0.012 - 0.020 |
1.0 - 50.0 |
0.040 - 2.0 |
|
0.51 - 1.0 |
0.020 - 0.040 |
2.0 - 80.0 |
0.080 - 3.2 |
|
1.1 - 2.0 |
0.040 - 0.080 |
10.0 - 130.0 |
0.40 - 5.2 |
|
2.1 - 3.0 |
0.080 - 0.120 |
20.0 - 130.0 |
0.80 - 5.2 |
|
3.1 - 4.0 |
0.120 - 0.160 |
40.0 - 100.0 |
1.60 - 4.0 |
|
4.1 - 6.0 |
0.160 - 0.240 |
50.0 - 90.0 |
2.0 - 3.6 |
|
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